供应磷化镓 GaP wafer
Gallium Phosphide
Material
:Dopant Type Diameter [mm] EPD [cm-2] Carrier Conc. [cm-3] Mobility [cm2/Vs] Orientation Resistivity [Ohmcm]
GaP:S N 2", 3" <1*105 2*1017-2*1018 >90 (100), (111), (110)
GaP:-
undoped N 2", 3" <1*105 <1016 >90 (100), (111), (110)
We offer materials in the form of:
--- epi-ready wafers:
Diameter: 2" (50.8±0.5mm) or (50.0±0.5mm); 3" (76.2±0.5mm)
Orientation: <100>±0.1° or <111>±0.1° or <110>±0.1°
Thickness: 350±20µm or as specified
Flats: US or EJ (15±2.0 mm / 8±2.0 mm)
Surface finish: Single side polished or double side polished
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898995850
